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PDF IPW90R120C3 Data sheet ( Hoja de datos )
| Número de pieza | IPW90R120C3 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPW90R120C3 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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CoolMOS™ Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Worldwide best R DS,on in TO247
• Ultra low gate charge
IPW90R120C3
Product Summary
V DS @ T J=25°C
R DS(on),max @ T J=25°C
Q g,typ
900 V
0.12 Ω
270 nC
PG-TO247
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPW90R120C3
Package
PG-TO247
Marking
9R120C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=8.8 A, V DD=50 V
I D=8.8 A, V DD=50 V
V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Mounting torque
M3 and M3.5 screws
Value
36
23
96
1940
2.9
8.8
50
±20
±30
417
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 1.0
page 1
2008-07-30
Please note the new package dimensions arccording to PCN 2009-134-A
1 page  
5 Typ. output characteristics
I D=f(V DS); T J=150 °C
parameter: V GS
60
8V
6V
5.5 V
5V
40
4.5 V
20
4V
IPW90R120C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T J=150 °C
parameter: V GS
1
0.75
10 V
0.5
0.25
5V
4.8 V
4.5 V
4V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=26 A; V GS=10 V
20
0.35
0
25 0 20 40
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); V DS=20V
parameter: T J
150
60
80
0.3
0.25
0.2
0.15
0.1
98 %
typ
100
50
25 °C
150 °C
0.05
0
-60
-20
20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 1.0
page 5
2008-07-30
Please note the new package dimensions arccording to PCN 2009-134-A
5 Page 
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPW90R120C3.PDF ] | |
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