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PDF FSB50660SFS Data sheet ( Hoja de datos )

Número de pieza FSB50660SFS
Descripción Motion SPM 5 SuperFET Series
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FSB50660SFS
Motion SPM® 5 SuperFET® Series
April 2014
Features
• UL Certified No. E209204 (UL1557)
• 600 V RDS(on) = 700 mMaxSuperFET MOSFET 3-
Phase Inverter with Gate Drivers and Protection
• Built-in Bootstrap Diodes Simplify PCB Layout
• Separate Open-Source Pins from Low-Side MOS-
FETS for Three-Phase Current-Sensing
• Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• Optimized for Low Electromagnetic Interference
• HVIC Temperature-Sensing Built-in for Temperature
Monitoring
• HVIC for Gate Driving and Under-Voltage Protection
• Isolation Rating: 1500 Vrms / 1 min.
• Moisture Sensitive Level (MSL) 3
• RoHS Compliant
Applications
• 3-Phase Inverter Driver for Small Power AC Motor
Drives
Related Source
RD-402 - Reference Design for Motion SPM 5 Super-
FET Series
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• AN-9080 - User’s Guide for Motion SPM 5 Series V2
General Description
The FSB50660SFS is an advanced Motion SPM® 5
module providing a fully-featured, high-performance
inverter output stage for AC Induction, BLDC and PMSM
motors such as refrigerators, fans and pumps. These
modules integrate optimized gate drive of the built-in
MOSFETs(SuperFET® technology) to minimize EMI and
losses, while also providing multiple on-module
protection features including under-voltage lockouts and
thermal monitoring. The built-in high-speed
HVIC requires only a single supply voltage and
translates the incoming logic-level gate inputs to the
high-voltage, high-current drive signals required to
properly drive the module's internal MOSFETs.
Separate open-source MOSFET terminals are available
for each phase to support the widest variety of control
algorithms.
Package Marking & Ordering Information
Device Marking
50660SFS
Device
FSB50660SFS
Package
SPM5Q-023
Reel Size
330mm
Packing Type
Tape-Reel
Quantity
450
©2012 Fairchild Semiconductor Corporation
FSB50660SFS Rev. C0
1
www.fairchildsemi.com

1 page




FSB50660SFS pdf
Recommended Operating Condition
Symbol
Parameter
Conditions
VPN
VCC
VBS
VIN(ON)
VIN(OFF)
tdead
Supply Voltage
Applied Between P and N
Control Supply Voltage
High-Side Bias Voltage
Input ON Threshold Voltage
Input OFF Threshold Voltage
Applied Between VCC and COM
Applied Between VB and VS
Applied Between IN and COM
Blanking Time for Preventing
Arm-Short
VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C
fPWM PWM Switching Frequency TJ 150°C
Min.
-
13.5
13.5
3.0
0
1.0
-
Typ.
300
15.0
15.0
-
-
-
20
Max.
400
16.5
16.5
VCC
0.6
-
-
Unit
V
V
V
V
V
s
kHz
Built-in Bootstrap Diode V -I Characteristic
FF
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V [V]
F
Tc=25°C
Figure 2. Built-in Bootstrap Diode Characteristics (Typical)
©2012 Fairchild Semiconductor Corporation
FSB50660SFS Rev. C0
5
www.fairchildsemi.com

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