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PDF FNB51060T1 Data sheet ( Hoja de datos )

Número de pieza FNB51060T1
Descripción Motion SPM 55 Series
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FNB51060T1
Motion SPM® 55 Series
September 2014
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 10 A 3-Phase IGBT Inverter Including Control
IC for Gate Drive and Protections
• Low-Loss, Short-Circuit Rated IGBTs
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Active-HIGH interface, works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• HVIC for Gate Driving, Under-Voltage and Short-Cir-
cuit Current Protection
• Fault Output for Under-Voltage and Short-Circuit Cur-
rent Protection
• Inter-Lock Function to Prevent Short-Circuit
• Shut-Down Input
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• Optimized for 15 kHz Switching Frequency
• Isolation Rating: 1500 Vrms / min.
General Description
FNB51060T1 is a Motion SPM 55 module providing a
fully-featured, high-performance inverter output stage for
AC Induction, BLDC, and PMSM motors. These modules
integrate optimized gate drive of the built-in IGBTs to
minimize EMI and losses, while also providing multiple
on-module protection features including under-voltage
lockouts, inter-lock function, over-current shutdown,
thermal monitoring of drive IC, and fault reporting. The
built-in, high-speed HVIC requires only a single supply
voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's robust short-
circuit-rated IGBTs. Separate negative IGBT terminals
are available for each phase to support the widest
variety of control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
Figure 1. 3D Package Drawing
(Click to Activate 3D Content)
Package Marking and Ordering Information
Device
FNB51060T1
Device Marking
FNB51060T1
Package
SPMFA-B20
Packing Type
RAIL
Quantity
13
©2014 Fairchild Semiconductor Corporation
FNB51060T1 Rev. C0
1
www.fairchildsemi.com

1 page




FNB51060T1 pdf
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ
TC = 25°C, TJ
Width
150°C
150°C, Under 1 ms Pulse
PC Collector Dissipation
TJ Operating Junction Temperature
TC = 25°C per Chip
(Note 5)
Note:
5. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 55 product is 150°C.
Rating
450
500
600
10
20
21
-40 ~ 150
Unit
V
V
V
A
A
W
°C
Control Part
Symbol
Parameter
VDD Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VF Fault Supply Voltage
IF Fault Current
VSC Current Sensing Input Voltage
Conditions
Rating
Applied between VDD - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VF - COM
Sink Current at VF pin
Applied between CSC - COM
20
20
-0.3 ~ VDD +0.3
-0.3 ~ VDD +0.3
5
-0.3 ~ VDD +0.3
Unit
V
V
V
V
mA
V
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TSTG
VISO
Storage Temperature
Isolation Voltage
Connect Pins to Heat Sink Plate
Conditions
VDD = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 μs
AC 60 Hz, Sinusoidal, 1 Minute
Rating
400
-40 ~ 125
1500
Unit
V
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Min.
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance
Inverter IGBT part (per 1 / 6 module)
Inverter FWD part (per 1 / 6 module)
-
-
Note:
6. For the measurement point of case temperature (TC), please refer to Figure 2.
Typ.
-
-
Max.
5.9
7.6
Unit
°C / W
°C / W
©2014 Fairchild Semiconductor Corporation
FNB51060T1 Rev. C0
5
www.fairchildsemi.com

5 Page





FNB51060T1 arduino
Lower arms
control input
Protection
Circuit state
Internal IGBT
Gate-Emitter Voltage
Output Current
c1
c6 c7
SET RESET
c4
c3
c2
SC
c8
Sensing Voltage
of the shunt
resistance
Fault Output Signal
SC Reference Voltage
CR circuit time
c5 constant delay
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Input “L” : IGBT OFF state.
c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7 : IGBT OFF state
Figure 11. Short-Circuit Protection
Hin
Lin
Ho
d1
Lo
d3 d4 d5
d2
/Fo
d1 : High Side First - Input - First - Output Mode
d2 : Low Side Noise Mode : No Lo
d3 : High Side Noise Mode : No Ho
d4 : Low Side First - Input - First - Output Mode
d5 : In - Phase Mode : No Ho
Figure 12. Inter-Lock Function
Hin : High-side Input Signal
Lin : Low-side Input Signal
Ho : High-side IGBT Gate Voltage
Lo : Low-side IGBT Gate Voltage
/Fo : Fault Output
©2014 Fairchild Semiconductor Corporation
FNB51060T1 Rev. C0
11
www.fairchildsemi.com

11 Page







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