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PDF FDD4243_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDD4243_F085 | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDD4243_F085
P-Channel PowerTrench® MOSFET
-40V, -14A, 64mΩ
Features
Typ rDS(on) = 36mΩ at VGS = -10V, ID = -6.7A
Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A
Typ Qg(TOT) = 21nC at VGS = -10V
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
Qualified to AEC Q101
Applications
Inverter
Power Supplies
December 2010
©2010 Fairchild Semiconductor Corporation
FDD4243_F085 Rev. C
1
www.fairchildsemi.com
1 page  
Typical Characteristics
300
100
100us
10
1ms
1 10ms
SINGLE PULSE
OPERATION IN THIS TJ = MAX RATED
AREA MAY BE
0.1 LIMITED BY rDS(on)
TC = 25oC
DC
1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
90
Figure 5. Forward Bias Safe Operating Area
40
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
1 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
60
PULSE DURATION = 80μs
50
DUTY CYCLE = 0.5% MAX
VDD = -5V
TJ = -55oC
40
30 TJ = 25oC
TJ = 175oC
20
10
0
012345
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
6
60
PULSE DURATION = 80μs
50 DUTY CYCLE = 0.5% MAX
VGS = -10V
40 VGS = -6V
30 VGS = -5V
20
10
VGS = -4.5V
VGS = -4V
VGS = -3V
0
0123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
4
200
180
160
140
120
100
80
60
40
20
2
ID = -6.7A PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
TJ = 175oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
2.0
PULSE DURATION = 80μs
1.8 DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = -6.7A
VGS = -10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD4243_F085 Rev. C
5
www.fairchildsemi.com
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