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PDF FDC642P_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDC642P_F085 | |
| Descripción | P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDC642P_F085
P-Channel PowerTrench® MOSFET
-20V, -4A, 100mΩ
Features
Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A
Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A
Fast switching speed
Low gate charge(6.9nC typical)
High performance trench technology for extremely low
rDS(on)
SuperSOTTM-6 package:small footprint(72% smaller
than standard SO-8);low profile(1mm thick).
RoHS Compliant
Qualified to AEC Q101
Applications
Load switch
Battery protection
Power management
June 2009
S
D
D
SuperSOT TM-6
G
D
D
S4
D5
D6
3G
2D
1D
©2009 Fairchild Semiconductor Corporation
FDC642P_F085 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Characteristics
100
10
1ms
1
10ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
0.01 0.1
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
1 10
100ms
1s
DC
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
5
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
16
VDD = -5V
TJ = -55oC
12
TJ = 25oC
8
TJ = 150oC
4
0
0123
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
4
20
VGS = -4.5V
16
VGS = -3.5V
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -3V
VGS = -2.5V
8
VGS = -2V
4
VGS = -1.5V
0
0123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
1000
800
600
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID = -4A
400
200
0
1
TJ = 150oC
TJ = 25oC
23
-VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-75
ID = -4A
VGS = -4.5V
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDC642P_F085 Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDC642P_F085.PDF ] | |
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