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PDF PDQ2307 Data sheet ( Hoja de datos )
| Número de pieza | PDQ2307 | |
| Descripción | 20V P-Channel MOSFETs | |
| Fabricantes | Potens semiconductor | |
| Logotipo |  |
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20V P-Channel MOSFETs
PDQ2307
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
SOT23-6 Pin Configuration
DDS
G
D
D
G
D
S
S
BVDSS
-20V
RDSON
26mΩ
ID
-6.5A
Features
-20V,-6.5A,RDS(ON) =26mΩ@VGS=-4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for -1.8V Gate Drive Applications
Applications
Notebook
Load Switch
Networking
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25℃)
Drain Current – Continuous (TC=100℃)
Drain Current – Pulsed1
Power Dissipation (TC=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance Junction to ambient
Rating
-20
±10
-6.5
-4.1
-26
1.56
0.012
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Typ.
---
Max.
80
Unit
℃/W
Potens semiconductor corp.
1
Ver.1.00
1 page  
20V P-Channel MOSFETs
PDQ2307
SOT23-6 PACKAGE INFORMATION
Symbol
A1
A2
b
c
D
E1
e
e1
L1
θ
Dimensions In Millimeters
Min Max
0.000
0.100
1.000
1.200
0.300
0.500
0.047
0.207
2.800
3.000
2.600
3.000
0.950 TYP
1.900 TYP
0.250
0°
0.550
8°
Dimensions In Inches
Min Max
0.000
0.004
0.040
0.047
0.012
0.019
0.002
0.008
0.110
0.118
0.103
0.118
0.037 TYP
0.075 TYP
0.010
0°
0.021
8°
Potens semiconductor corp.
5
Ver.1.00
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PDQ2307.PDF ] | |
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