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PDF K2229 Data sheet ( Hoja de datos )

Número de pieza K2229
Descripción MOSFET ( Transistor ) - 2SK2229
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! K2229 Hoja de datos, Descripción, Manual

2SK2229
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2229
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drainsource ON resistance
: RDS (ON) = 0.12 (typ.)
z High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
5
20
1.3
129
5
0.13
150
55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (cha)
96.1 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 7 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2009-09-29

1 page




K2229 pdf
2SK2229
Safe Operating Area
100
ID max (pulsed) *
10
1 ms *
100 μs *
ID max (Continuous)
1
10 ms *
DC Operation
Ta = 25°C
0.1
0.01 *: Single Nonrepetitive Pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.01
0.1
1
VDSS max
10
Drain-Source Voltage VDS (V)
100
RG = 25
VDD = 25 V, L = 7 mH
EAS
=
1
2
L I2
⋅ ⎜⎛
BVDSS
BVDSS VDD
⎟⎞
5 2009-09-29

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