PDF TGF2120 Data sheet ( Hoja de datos )

Número de pieza	TGF2120
Descripción	1200um Discrete GaAs pHEMT
Fabricantes	TriQuint Semiconductor
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No Preview Available ! Applications  Defense & Aerospace  High-Reliability  Test and Measurement  Commercial  Broadband Wireless TGF2120 1200um Discrete GaAs pHEMT Product Features  Frequency Range: DC - 20 GHz  31 dBm Typical Output Power - P1dB  11 dB Typical Gain @ 12 GHz  57% Typical PAE @ 12 GHz  No Vias  Technology: 0.25 um GaAs pHEMT  Chip Dimensions: 0.41 x 0.54 x 0.10 mm Functional Block Diagram General Description The TriQuint TGF2120 is a discrete 1200-Micron pHEMT which operates from DC to 20 GHz. The TGF2120 is designed using TriQuint’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2120 typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the TGF2120 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant. Pad Configuration Pad Dimensions G (71um X 71um) D (71um X 71um) S (113.8um X 71um) S (113.8um X 106um) Terminals Gate Drain Source (outermost) Source (center) Ordering Information Part TGF2120 ECCN EAR99 Description 1200um GaAs pHEMT Datasheet: Rev A 06-13-13 © 2013 TriQuint - 1 of 6- Disclaimer: Subject to change without notice www.triquint.com 1 page Assembly Notes TGF2120 1200um Discrete GaAs pHEMT Component placement and adhesive attachment assembly notes:  Vacuum pencils and/or vacuum collets are the preferred method of pick up.  Air bridges must be avoided during placement.  The force impact is critical during auto placement.  Organic attachment (i.e. epoxy) can be used in low‐power applications.  Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes:  Recommend Eutectic die attach with AuSn (80/20) solder and limit exposure to temperatures above 300C to 30 seconds, maximum.  An alloy station or conveyor furnace with reducing atmosphere should be used.  Do not use any kind of flux.  Coefficient of thermal expansion matching is critical for long‐term reliability.  Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes:  Either Thermo‐compression Wedge Bonding or Thermosonic Ball Bonding can be used to bond onto the die.  Force, time, and ultrasonics are critical bonding parameters.  Aluminum wire should not be used.  Devices with small pad sizes should be bonded with 0.0008‐inch wire. Product Compliance Information ESD Sensitivity Caution – ESD Sensitive Device Proper ESD procedures should be followed when handling this device. Not HAST Compliant. RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:  Lead Free  Halogen Free (Chlorine, Bromine)  Antimony Free  TBBP-A (C15H12Br402) Free  PFOS Free  SVHC Free Datasheet: Rev A 06-13-13 © 2013 TriQuint - 5 of 6- Disclaimer: Subject to change without notice www.triquint.com 5 Page

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Número de pieza	Descripción	Fabricantes
TGF2120	1200um Discrete GaAs pHEMT	TriQuint Semiconductor

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