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Número de pieza | TGF2080 | |
Descripción | 800um Discrete GaAs pHEMT | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
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Defense & Aerospace
High-Reliability
Test and Measurement
Commercial
Broadband Wireless
TGF2080
800um Discrete GaAs pHEMT
Product Features
Frequency Range: DC - 20 GHz
29.5 dBm Typical Output Power - P1dB
11.5 dB Typical Gain @ 12 GHz
56% Typical PAE @ 12 GHz
No Vias
Technology: 0.25 um GaAs pHEMT
Chip Dimensions: 0.41 x 0.54 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2080 is a discrete 800-Micron pHEMT
which operates from DC to 20 GHz. The TGF2080 is
designed using TriQuint’s proven standard 0.25um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2080 typically provides 29.5 dBm of output
power at P1dB with gain of 11.5 dB and 56% power-
added efficiency at 1 dB compression. This
performance makes the TGF2080 appropriate for high
efficiency applications. The protective overcoat layer
with silicon nitride provides a level of environmental
robustness and scratch protection.
Lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (121um X 71um)
S (121um X 96um)
Terminals
Gate
Drain
Source (outermost)
Source (center)
Ordering Information
Part
TGF2080
ECCN
EAR99
Description
800um GaAs pHEMT
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 1 of 6-
Disclaimer: Subject to change without notice
www.triquint.com
1 page Assembly Notes
TGF2080
800um Discrete GaAs pHEMT
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment (i.e. epoxy) can be used in low‐power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
Recommend Eutectic die attach with AuSn (80/20) solder and limit exposure to temperatures above 300C to 30
seconds, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long‐term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
Either Thermo‐compression Wedge Bonding or Thermosonic Ball Bonding can be used to bond onto the die.
Force, time, and ultrasonics are critical bonding parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0008‐inch wire.
Product Compliance Information
ESD Sensitivity
Caution – ESD Sensitive Device
Proper ESD procedures should be followed when
handling this device.
Not HAST Compliant.
RoHs Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 5 of 6-
Disclaimer: Subject to change without notice
www.triquint.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TGF2080.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGF2080 | 800um Discrete GaAs pHEMT | TriQuint Semiconductor |
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