|
|
PDF TGA4542 Data sheet ( Hoja de datos )
| Número de pieza | TGA4542 | |
| Descripción | 37 - 40 GHz 1W Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TGA4542 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
TGA4542
37 - 40 GHz 1W Power Amplifier
Applications
Point to Point Radio
Millimeter-wave Communications
Military & Space
Product Features
Frequency range: 37 - 40 GHz
Output Power: 32.5 dBm Psat, 31.5 dBm P1dB
Gain: 26 dBm Typical
TOI: 38 dBm @ 18 dBm Output/Tone
Integrated Power Detector
Bias: Vcc = 6V, Icc = 900 mA Typical
Dimension: 2.95 x 2.95 x 0.1 mm
Functional Block Diagram
Vg Vd1 Vd2
14 13 12
Vd3
11
1
RF In
Vd4 Vref
10 9
8
Vdet
7
RF Out
General Description
The TriQuint TGA4542 is a 37 - 40 GHz Power
Amplifier designed using TriQuint’s power pHEMT
production process.
The TGA4542 typically provides 31.5 dBm of output
power at 1dB gain compression with small signal gain
of 26 dB. Third Order Intercept is 38 dBm at 18 dBm
Output/Tone.
The TGA4542 is ideally suited for Point-to-Point
Radio, Ka-band communications, and Millimeter-wave
communications.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
23 4
5
6
Vg Vd1 Vd2
Vd3
Vd4
Bond Pad Configuration
Bond Pad #
1
2, 14
3, 4, 5, 6, 10, 11, 12, 13
7
8
9
Function Label
RF In
Vg
Vd
RF Out
Vdet
Vref
Preliminary Data Sheet: Rev - 9/15/12
© 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No. ECCN Description
TGA4542
3A001.b.2.e
37 - 40 GHz 1W Power
Amplifier
Standard order qty = 50 pieces.
- 1 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
1 page  
TGA4542
37 - 40 GHz 1W Power Amplifier
Typical Performance
P1dB vs. Frequency vs. Id
Vd = 5 - 6 V, Id = 900 - 1100 mA, +25°C
33
32
31
30
29
28 5V900mA
27 5V1100mA
26 6V900mA
25 6V1100mA
24
23
36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41
Frequency (GHz)
Gain vs. Frequency vs. Id
Vd = 5 - 6V, Id = 900 - 1100 mA, +25°C
30
29
28
27
26
25
24 5V900mA
23 5V1100mA
22 6V900mA
21 6V1100mA
20
36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41
Frequency (GHz)
TOI vs. Frequency vs. Id
Vd = 5 - 6 V, Id = 900 - 1100 mA, +25°C
41
40
39
38
37
36
35 5V900mA
34 5V1100mA
33 6V900mA
32 6V1100mA
31
30
36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41
Frequency (GHz)
Gain vs. Frequency vs. Temperature
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical
30
28
26
24
22
20
18 +85°C
16 +25°C
14 -40°C
12
10
36 36.5 37 37.5 38 38.5 39 39.5 40 40.5
Frequency (GHz)
41
P1dB vs. Frequency vs. Temperature
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical
33
32
31
30
29
28 +85°C
27 +25°C
26 -40°C
25
24
23
36 36.5 37 37.5 38 38.5 39 39.5 40 40.5
Frequency (GHz)
41
TOI vs. Frequency vs. Temperature
Vd = 6V, Id = 900 mA, Vg = -0.7 V Typical
40
39
38
37
36
35
34 +85°C
33 +25°C
32 -40°C
31
30
36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41
Frequency (GHz)
Preliminary Data Sheet: Rev - 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 5 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
5 Page 
TGA4542
37 - 40 GHz 1W Power Amplifier
Product Compliance Information
ESD Information
Solderability
ESD Rating:
Value:
Test:
Standard:
Class 0
Passes 100V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Compatible with both lead-free (260 °C max.
reflow temp.) and tin/lead (245 °C max. reflow
temp.) soldering processes.
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and
Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Assembly Notes
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes,
maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Data Sheet: Rev - 9/15/12
© 2012 TriQuint Semiconductor, Inc.
- 11 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TGA4542.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TGA4541-SM | Ka-Band Variable Gain Driver Amplifier | TriQuint Semiconductor |
| TGA4542 | 37 - 40 GHz 1W Power Amplifier | TriQuint Semiconductor |
| TGA4543 | 40.5 - 43.5 GHz Power Amplifier | TriQuint Semiconductor |
| TGA4544-SM | 1W Power Amplifier | TriQuint Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |