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Número de pieza | TGA2583-SM | |
Descripción | 10W GaN Power Amplifier | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGA2583-SM (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! Applications
• Commercial and Military Radar
TGA2583-SM
2.7 to 3.7GHz, 10W GaN Power Amplifier
QFN 5x5 mm 32L
Product Features
• Frequency Range: 2.7 - 3.7 GHz
• PSAT: 40.5 dBm
• PAE: > 50 %
• Small Signal Gain: 33 dB
• Return Loss: > 12 dB
• Bias: VD = 25 - 32 V (CW or Pulsed), IDQ = 175 mA,
VG = −2.3 V Typical
• Pulsed VD: PW = 100 us, DC = 10 %
• Package Dimensions: 5.0 x 5.0 x 1.45 mm
Functional Block Diagram
32 31 30 29 28 27 26 25
1
2
RF OUT 3
4
5
6
7
8
24
23
22 RF IN
21
20
19
18
17
9 10 11 12 13 14 15 16
General Description
TriQuint’s TGA2583-SM is a packaged MMIC power
amplifier which operates from 2.7 to 3.7 GHz. The
TGA2583-SM is designed using TriQuint’s production
0.25-μm GaN on SiC process.
The TGA2583-SM typically provides 40.5 dBm of
saturated output power, > 50% power-added efficiency,
and 33 dB small signal gain. It can operate under both
pulse and CW conditions.
The TGA2583-SM is available in a low-cost, surface
mount 32 lead 5x5 AIN QFN. It is ideally suited to
support both commercial and defense related radar
applications.
Pin Configuration
Pad No.
1, 3-4, 6, 8-9, 13, 16-17, 19,
21, 23-25, 32
3
5, 7, 10-11, 15, 18, 20, 26-31
12
14
22
Symbol
GND
RF OUT
NC
DRAIN
GATE
RF IN
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50 ohms.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part
TGA2583-SM
ECCN Description
3A001.b.2.a
2.7 - 3.7 GHz, 10 W
GaN Power Amplifier
Preliminary Datasheet: Rev- 04-04-14
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page TGA2583-SM
2.7 to 3.7GHz, 10W GaN Power Amplifier
Typical Performance: Large Signal
Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10%
44 Output Power vs. Frequency vs. VD
IDQ = 175 mA, PIN = 16 dBm
43
42
41
40
39 25 V
28 V
38 32 V
37
36
35
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
4.1
44 Output Power vs. Frequency vs. VD
VD = 25 V, PIN = 16 dBm
43
42
41
40
175 mA
39 350 mA
38
37
36
35
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
4.1
Output Power vs. Input Power vs. Freq.
44
42 VD = 25 V, IDQ = 175 mA
Temp. = +25 °C
40
38
36
34
32
30
2.7 GHz
28
3.1 GHz
26 3.5 GHz
24
22
20
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Input Power (dBm)
Output Power vs. Frequency vs. Temp.
44
VD = 28 V, IDQ = 175 mA, PIN = 16 dBm
43
42
41
40 +85°C
39 +25°C
−40°C
38
37
36
35
2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1
Frequency (GHz)
Output Power vs. Input Power vs. Temp.
44
42 VD = 28 V, IDQ = 175 mA, 2.7 GHz
40
38
36
34
32
+85°C
30 +25°C
28 −40°C
26
24
22
20
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Input Power (dBm)
Preliminary Datasheet: Rev- 04-04-14
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page Mechanical Information
TGA2583-SM
2.7 to 3.7GHz, 10W GaN Power Amplifier
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Ceramic
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2583: Part number
YY: Part Assembly year
WW: Part Assembly week
MXXX: Batch ID
Preliminary Datasheet: Rev- 04-04-14
© 2014 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet TGA2583-SM.PDF ] |
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