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PDF C2881 Data sheet ( Hoja de datos )

Número de pieza C2881
Descripción NPN Transistor - 2SC2881
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! C2881 Hoja de datos, Descripción, Manual

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications
Power Amplifier Applications
2SC2881
Unit: mm
High voltage: VCEO = 120 V
High transition frequency: fT = 120 MHz (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on ceramic substrate)
Complementary to 2SA1201
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
120
120
5
800
160
500
1000
150
55 to 150
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1980-07
1 2013-11-01

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