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Número de pieza | C2982 | |
Descripción | NPN Transistor - 2SC2982 | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de C2982 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
2SC2982
Unit: mm
• High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
• Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SA1314
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse (Note 1)
Base current
DC
Pulse (Note 1)
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
IBP
PC
PC
(Note 2)
Tj
Tstg
30
30
10
6
2
4
0.4
0.8
500
1000
150
−55 to 150
V
V
V
A
A
mW
°C
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2004-07-07
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet C2982.PDF ] |
Número de pieza | Descripción | Fabricantes |
C2982 | NPN Transistor - 2SC2982 | Toshiba |
C2983 | NPN Transistor - 2SC2983 | Toshiba Semiconductor |
C2987 | NPN Transistor - 2SC2987 | SavantIC |
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