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PDF 2SC2290 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2290 | |
| Descripción | Silicon NPN POWER TRANSISTOR | |
| Fabricantes | HGSemi | |
| Logotipo |  |
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HG
Semiconductors
HG RF POWER TRANSISTOR
2SC2290
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60W PEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulation Distortion : IMD = 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
C ollector C urrent
Collector Power Dissipation
Junction T em perature
Storage Temperature Range
SYMBOL
RATING
UNIT
V CBO
V CES
VCEO
V EBO
IC
CP
Tj
T stg
45
45
18
4
20
175
175
65~175
V
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 5.2g
—
—
2 13B1A
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
D C C urrentG ain
Collector Output Capacitance
P ow er G ain
InputP ow er
Collector Efficiency
Intermodulation Distortion
Series Equivalent Input Impedance
Series Equivalent Output Impedance
SYMBOL
TEST CONDITION
V(BR) CEO IC = 100mA, IB = 0
V (BR) CES IC = 100mA, VEB = 0
V (BR) EBO IE = 1mA, IC = 0
hFE
C ob
VCE = 5V, CI = 10A *
V CB = 12.5V,EI = 0
f = 1MHz
Gp
Pi
ηC
IMD
V CC = 12.5V, 1f= 28.000MHz,
f2 = 28.001MHz
Iidle = 50mA
Po = 60W PEP (Fig.)
Z in
Zout
V CC = 12.5V, 1f= 28.000MHz,
f2 = 28.001MHz
Po = 60W PEP
MIN.
18
45
4
10
TYP.
—
—
—
—
MAX. UNIT
—
—
—
150
V
V
V
—
— — 500 pF
11.8 13.8 —
dB
— 2.5
4 W PEP
35 — — %
— — 30 dB
—
1.02
j0.17
—
Ω
—
0.86
j0.21
—
Ω
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC2290.PDF ] | |
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