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PDF 2SC2510 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2510 | |
| Descripción | Silicon NPN POWER TRANSISTOR | |
| Fabricantes | HGSemi | |
| Logotipo |  |
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HG
Semiconductors
2SC2510HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 28V, 28MHz Characteristics
Output Power
: Po = 150W PEP (Min.)
Power Gain
: Gp = 12.2dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulation Distortion : IMD = 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
C ollector C urrent
Collector Power Dissipation
Junction T em perature
Storage Temperature Range
SYMBOL
V CBO
VCES
VCEO
V EBO
IC
PC
Tj
T stg
RATING
60
60
35
4
20
250
175
65~175
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
UNIT
V
V
V
V
A
W
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 5.2g
—
—
2 13B1A
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
D C C urrentG ain
Collector Output Capacitance
P ow er G ain
InputP ow er
Collector Efficiency
Intermodulation Distortion
Series Equivalent Input Impedance
Series Equivalent Output Impedance
SYMBOL
TEST CONDITION
V(BR) CEO IC = 100mA, IB = 0
V(BR) CES IC = 100mA, VEB = 0
V (BR) EBO IE = 1mA, IC = 0
h FE VCE = 5V, CI = 10A *
C ob
V CB = 28V, EI = 0
f = 1MHz
Gp
Pi
ηC
IMD
V CC = 28V, 1f = 28.000MHz,
f2 = 28.001MHz
Iidle = 100mA
Po = 150W PEP (Fig.)
Z in
Z out
V CC = 28V, 1f = 28.000MHz,
f2 = 28.001MHz,
Po = 150W PEP
MIN. TYP. MAX. UNIT
35 — — V
55 — — V
4 —— V
10 — —
— 450 600 pF
12.2 13.3 —
dB
—7
9 W PEP
35 — — %
— — _ 30 dB
—
1.4
_j0.9
—
Ω
—
2.3
_j0.9
—
Ω
Note : Above parameters , ratings , limits and conditions are subject to change
www.HGSemi.com
Sep. 1998
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC2510.PDF ] | |
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