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Número de pieza | FDW2601NZ | |
Descripción | Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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May 2008
FDW2601NZ
Dual N-Channel 2.5V Specified PowerTrench®
MOSFET
tmM
Features
! 8.2A, 30V rDS(ON) = 0.015Ω, VGS = 4.5V
rDS(ON) = 0.020Ω, VGS = 2.5V
! Extended VGS range (±12 V) for battery applications
! HBM ESD Protection Level of 3.5kV Typical (note 3)
! High performance trench technology for extremely low
rDS(ON)
! Low profile TSSOP-8 package
Applications
! Load switch
! Battery charge
! Battery disconnect circuits
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
G2
S2
S2
D2
TSSOP-8
Pin 1
G1
S1
S1
D1
D1 D2
G1 G2
S1 S2
©2008 Fairchild Semiconductor Corporation
FDW2601NZ Rev. A1
1
www.fairchildsemi.com
1 page Typical Characteristic (Continued) TA = 25°C unless otherwise noted
300
100
100µs
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10ms
SINGLE PULSE
1
TJ = MAX RATED
TA = 25oC
0.5
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 5. Forward Bias Safe Operating Area
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 10V
40
TJ = 150oC
20
TJ = 25oC
TJ = -55oC
0
1.0
1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Transfer Characteristics
2.5
60
VGS = 10V
VGS = 2.5V
40 VGS = 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
20
VGS = 1.8V
45
ID = 8.2A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
ID = 1A
15
0
0
0.5 1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.5
0
1
234
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.25
1.00
VGS = VDS, ID = 250µA
1.0 0.75
0.5
-80
VGS = 4.5V, ID = 8.2A
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.50
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
FDW2601NZ Rev. A1
5
www.fairchildsemi.com
5 Page TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
F-PFS™
FRFET®
Power-SPM™
PowerTrench®
tm
CorePOWER™
CROSSVOLT™
CTL™
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Programmable Active Droop™
QFET®
QS™
TinyBoost™
TinyBuck™
TinyLogic®
Current Transfer Logic™
EcoSPARK®
GTO™
IntelliMAX™
Quiet Series™
RapidConfigure™
TINYOPTO™
TinyPower™
EfficentMax™
ISOPLANAR™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
™
®
Fairchild®
Fairchild Semiconductor®
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
UniFET™
VCX™
VisualMax™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDW2601NZ Rev. A1
WWW. fairchildsemicom
11 Page |
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PDF Descargar | [ Datasheet FDW2601NZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDW2601NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
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