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PDF A1933 Data sheet ( Hoja de datos )
| Número de pieza | A1933 | |
| Descripción | PNP Transistor - 2SA1933 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1933 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1933
2SA1933
High-Current Switching Applications
Industrial Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A)
• High-speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SC5175
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−60
−50
−7
−5
−1
1.8
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet A1933.PDF ] | |
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