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PDF K223 Data sheet ( Hoja de datos )
| Número de pieza | K223 | |
| Descripción | MOSFET ( Transistor ) - 2SK223 | |
| Fabricantes | Sanyo | |
| Logotipo |  |
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Ordering number:EN659K
N-Channel Junction Silicon FET
2SK223
High Voltage Driver Applications
Features
· Ultrahigh withstand voltage (VGDS≥–80V).
· Due to low gate leakage currents even at high
voltage, the 2SK223 is suitable for a wide range of
application (IGDL=1nA/VDS=50V, ID=1mA).
· High yfs(yfs=20mS/VDS=30V, f=1kHz).
Package Dimensions
unit:mm
2019B
[2SK223]
5.0
4.0
4.0
0.45
0.5
0.45
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGDS
IG
PD
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
1.3
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)GDS
IGSS
IDSS*
VGS(off)
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
* : The 2SK223 is classified by IDSS as follows (unit : mm) :
IG=–100µA
VGS=–30V, VDS=0
VDS=30V, VGS=0
VDS=30V, ID=10µA
VDS=30V, VGS=0, f=1kHz
VDS=30V, VGS=0, f=1MHz
VDS=30V, VGS=0, f=1MHz
VDS=10V, ID=3mA, Rg=10kΩ, f=1kHz
1.2 D 3.0 2.5 E 6.0 5.0 F 12.0 10.0 G 24.0
1.3
0.44
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : TO-92
EIAJ : SC-43
Ratings
80
–80
10
400
125
–40 to +125
Unit
V
V
mA
mW
˚C
˚C
Ratings
min typ
–80
1.2*
–0.75
20
12
2.5
1.5
max
–1.0
24*
Unit
V
nA
mA
V
mS
pF
pF
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42099TH (KT)/71095TS (KOTO)/6027KI/2275MW, TS No.659–1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K223.PDF ] | |
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