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PDF C5254 Data sheet ( Hoja de datos )

Número de pieza C5254
Descripción NPN Transistor - 2SC5254
Fabricantes Toshiba 
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5254
2SC5254
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure: NF = 1.5dB (f = 2 GHz)
· High gain: Gain = 8.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
15
7
1.5
40
20
150
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA, f = 1 GHz
VCE = 5 V, IC = 20 mA, f = 2 GHz
VCE = 5 V, IC = 5 mA, f = 1 GHz
VCE = 5 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
9 12 ¾ GHz
11.5
5.5
14.5
8.5
¾
¾
dB
¾ 1.1 ¾
dB
¾ 1.5
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 20 mA
Cob VCB = 5 V, IE = 0, f = 1 MHz
Cre
(Note 2)
¾
¾
50
¾
¾
¾1
¾1
¾ 160
0.5 ¾
0.4 0.8
mA
mA
pF
pF
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-24

1 page




C5254 pdf
2SC5254
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2003-03-24

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