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PDF IPN10EL-S Data sheet ( Hoja de datos )
| Número de pieza | IPN10EL-S | |
| Descripción | PN Half Bridge Driver IC | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IPN10EL-S
PN Half Bridge Driver IC
Data Sheet
Rev 1.1, 2014-01-21
Automotive Power
1 page  
4 General Product Characteristics
IPN10EL-S
General Product Characteristics
4.1 Absolute Maximum Ratings
Table 2 Absolute Maximum Ratings 1)
TJ ≤ -40 °C ≤ +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Min.
Values
Unit Note /
Number
Typ. Max.
Test Condition
Voltages
Supply voltage at VS
Voltage range at EN
Voltage range at OCL
Voltage range at OCH
Voltage between OCH and OCL
Voltage range at RDT
Voltage range at ERR
Voltage range at GH
Voltage range at GL
Voltage between VS and GH
Temperatures
VS
VEN
VOCL
VOCH
VOCH-OCL
VRDT
VERR
VGH
VGL
VS-VGH
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
–
–
–
–
–
–
–
–
–
–
40 V –
40 V –
40 V –
40 V –
0.3 V –
6 V–
6 V–
40 V –
10 V –
10 V –
P_4.1.1
P_4.1.2
P_4.1.3
P_4.1.4
P_4.1.5
P_4.1.6
P_4.1.7
P_4.1.8
P_4.1.9
P_4.1.10
Junction temperature
Storage temperature
Lead soldering temperature
(1/16’’ from body)
Tj
-40 –
150 °C –
Tstg -40 – 150 °C –
Tsol – – 260 °C –
P_4.1.11
P_4.1.12
P_4.1.13
Peak reflow soldering temperature2)
Power Dissipation
Tref
– – 260 °C –
P_4.1.14
Power Dissipation (DC) @
TCASE=140°C
Ptot – – 1 Ω –
P_4.1.15
ESD Susceptibility
ESD Resistivity3)
CDM
VESD
VCDM
–
–
1) Not subject to production test, specified by design.
2) Reflow profile IPC/JEDEC J-STD-020C
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B
–
–
2 kV –
1.5 kV –
P_4.1.16
P_4.1.17
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
5 Rev 1.1, 2014-01-21
5 Page 
IPN10EL-S
Description and Electrical Characteristics
Table 5 Electrical Characteristic MOSFET Drivers
VS = VUVOFF to 40V, TJ = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Number
Quiescent current at VS
IqVS
Supply current at VS (device enable) IVS
-
-
- 3 µA VS=18V; EN=0V; P_5.1.29
TJ=105°C
5.0 7.0 mA no switching;
P_5.1.30
RDT=10kΩ; VS=18V;
EN=high
Supply current at VS (device enable) IVS
-
1) Not subject to production test, specified by design.
25 35 mA CLoad=16nF; f=20kHz; P_5.1.31
VS=18V; RDT=10kΩ
IL
50%
GH
OFF
tP(IH F)
trise
90%
ON 10%
GL
ON
tDT trise
90%
OFF
10%
Figure 5 Definition of timings
tDT tfall
tP(ILF)
tfall
t
t
t
Data Sheet
11 Rev 1.1, 2014-01-21
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet IPN10EL-S.PDF ] | |
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