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PDF TEA1523P Data sheet ( Hoja de datos )
| Número de pieza | TEA1523P | |
| Descripción | SMPS ICs | |
| Fabricantes | NXP Semiconductors | |
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TEA152x
SMPS ICs for low-power systems
Rev. 04 — 14 September 2010
Product data sheet
1. General description
The TEA152x family STARplug is a Switched Mode Power Supply (SMPS) controller IC
that operates directly from the rectified universal mains. It is implemented in the
high-voltage EZ-HV SOI process, combined with a low-voltage Bipolar Complementary
Metal-Oxide Semiconductor (BiCMOS) process. The device includes a high-voltage
power switch and a circuit for start-up directly from the rectified mains voltage.
A dedicated circuit for valley switching is built in, which makes a very efficient slim-line
electronic power-plug concept possible.
In its most basic version of application, the TEA152x family acts as a voltage source.
Here, no additional secondary electronics are required. A combined voltage and current
source can be realized with minimum costs for external components. Implementation of
the TEA152x family renders an efficient and low cost power supply system.
2. Features and benefits
Designed for general purpose supplies up to 30 W
Integrated power switch:
TEA1520x: 48 Ω; 650 V
TEA1521x: 24 Ω; 650 V
TEA1522x: 12 Ω; 650 V
TEA1523P: 6.5 Ω; 650 V
Operates from universal AC mains supplies (80 V to 276 V)
Adjustable frequency for flexible design
RC oscillator for load insensitive regulation loop constant
Valley switching for minimum switch-on loss
Frequency reduction at low power output makes low standby power possible
(< 100 mW)
Adjustable overcurrent protection
Undervoltage protection
Temperature protection
Short-circuit winding protection
Simple application with both primary and secondary (opto) feedback
Available in DIP8 and SO14 packages
1 page  
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
components RRC and CRC. This mode is called Pulse Width Modulation (PWM).
Furthermore, a primary stroke is started only in a valley of the secondary ringing. This
valley switching principle minimizes capacitive switch-on losses.
8.1 Start-up and Underoltage lockout
Initially, the IC is self supplying from the rectified mains voltage. The IC starts switching as
soon as the voltage on pin VCC passes the VCC(startup) level. The supply is taken over by
the auxiliary winding of the transformer as soon as VCC is high enough and the supply
from the line is stopped for high efficiency operation.
When for some reason the auxiliary supply is not sufficient, the high-voltage supply also
supplies the IC. As soon as the voltage on pin VCC drops below the VCC(stop) level, the IC
stops switching and restarts from the rectified mains voltage.
8.2 Oscillator
The frequency of the oscillator is set by the external resistor and capacitor on pin RC. The
external capacitor is charged rapidly to the VRC(max) level and, starting from a new primary
stroke, it discharges to the VRC(min) level. Because the discharge is exponential, the
relative sensitivity of the duty factor to the regulation voltage at low duty factor is almost
equal to the sensitivity at high duty factors. This results in a more constant gain over the
duty factor range compared to PWM systems with a linear sawtooth oscillator. Stable
operation at low duty factors is easily realized. For high efficiency, the frequency is
reduced as soon as the duty factor drops below a certain value. This is accomplished by
increasing the oscillator charge time.
To ensure that the capacitor can be charged within the charge time, the value of the
oscillator capacitor should be limited to approximately 1 nF.
8.3 Duty factor control
The duty factor is controlled by the internal regulation voltage and the oscillator signal on
pin RC. The internal regulation voltage is equal to the external regulation voltage (−2.5 V)
multiplied by the gain of the error amplifier (typically 20 dB which is 10×).
8.4 Valley switching
A new cycle is started when the primary switch is switched on (see Figure 4). After a
certain time (determined by the oscillator voltage RC and the internal regulation level), the
switch is turned off and the secondary stroke starts. The internal regulation level is
determined by the voltage on pin REG.
After the secondary stroke, the drain voltage shows an oscillation with a frequency of
approximately:
----------------------1-----------------------
2 × π × (Lp × Cp)
where:
Lp = primary self-inductance
Cp = parasitic capacitance on drain node
(1)
TEA152X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 September 2010
© NXP B.V. 2010. All rights reserved.
5 of 20
5 Page 
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
Table 6. Characteristics …continued
Tamb = 25 °C; no overtemperature; all voltages are measured with respect to ground; currents are
positive when flowing into the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
Valley switching
(ΔV/Δt)vrec
valley recognition voltage
change with time
−102 -
+102 V/μs
fvalley
ringing frequency for valley N × Vo = 100 V
switching
200 550 800 kHz
td(vrec-swon)
valley recognition to
switch-on delay time
- 150 - ns
Current and short-circuit winding protection
Vsource(max)
maximum voltage on pin
SOURCE
ΔV/Δt = 0.1 V/μs
0.47 0.50 0.53 V
td(prop)
Vswp
delay from detecting
Vsource(max) to switch-off
short-winding protection
voltage
ΔV/Δt = 0.5 V/μs
ΔV/Δt = 0.5 V/μs
- 160 185 ns
0.7 0.75 0.8 V
tleb leading edge blanking time
FET output stage
250 350 450 ns
IL(drain)
leakage current on pin
DRAIN
Vdrain = 650 V
- - 125 μA
VBR(DRAIN)
breakdown voltage on pin
DRAIN
Tj > 0 °C
650 - - V
RDSon
drain-source on-state
resistance
TEA1520x
TEA1521x
TEA1522x
TEA1523P
tf(DRAIN)
fall time on pin DRAIN
Isource = −0.06 A
Tj = 25 °C
Tj = 100 °C
Isource = −0.125 A
Tj = 25 °C
Tj = 100 °C
Isource = −0.25 A
Tj = 25 °C
Tj = 100 °C
Isource = −0.50 A
Tj = 25 °C
Tj = 100 °C
Vi = 300 V;
no external capacitor
at drain
-
-
-
-
-
-
-
-
-
48 55.2 Ω
68 78.2 Ω
24 27.6 Ω
34 39.1 Ω
12 13.8 Ω
17 19.6 Ω
6.5 7.5 Ω
9.0 10.0 Ω
75 -
ns
Temperature protection
Tprot(max)
maximum threshold
temperature
150 160 170 °C
Tprot(hys)
hysteresis of protection
temperature
- 2 - °C
TEA152X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 14 September 2010
© NXP B.V. 2010. All rights reserved.
11 of 20
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