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PDF BTS50055-1TMB Data sheet ( Hoja de datos )

Número de pieza BTS50055-1TMB
Descripción Smart Highside High Current Power Switch
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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Data Sheet BTS50055-1TMB
Smart Highside High Current Power Switch Reversave
Features
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Reversave(Reverse battery protection)
Diagnostic feedback with load current sense
Open load detection via current sense
Loss of Vbb protection 2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
62 V
42 V
5.0 ... 34 V
6.0 m
70 A
130 A
14 000
PG-TO220-7-11
Application
Power switch with current sense diagnostic
feedback for 12 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
Replaces electromechanical relays, fuses and discrete circuits
1
Standard
7
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
4 & Tab
Voltage
source
Overvoltage
protection
Current
limit
Gate
protection
R bb
+ Vbb
Voltage
sensor
3 IN
ESD
Logic
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
VIS
Logic GND
I IS
IS
5
RIS
PROFET
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1of 18
Load GND
2010-April-27

1 page




BTS50055-1TMB pdf
Data Sheet BTS50055-1TMB
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions 16)
Short circuit current limit (Tab to pins 1, 2, 6, 7)
VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 17)
(inductive load switch off)
IL= 40 mA:
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
IL(SC)
IL(SC)
IL(SC)
td(SC)
-VOUT(CL)
VON(CL)
VON(SC)
Tjt
Tjt
Reverse Battery
Reverse battery voltage 18)
On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) Tj = 25 °C:
Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 kTj = 150°C:
Integrated resistor in Vbb line
-Vbb
RON(rev)
Rbb
Values
Unit
min typ max
-- 110 --
-- 130 180
65 115 --
A
80 --
14 16.5
350
20
µs
V
39 42 47 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
-- -- 16 V
-- 5.4 7.0 m
8.9 12.3
-- 120
--
16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
Page 5
2010-April-27

5 Page





BTS50055-1TMB arduino
Data Sheet BTS50055-1TMB
Options Overview
Type
Over temperature protection with hysteresis
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
with over temperature shutdown
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
Over voltage shutdown
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -19 V typ
BTS50055-1TMB
X
X
X
-
X
X25)
24) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Infineon Technologies AG
Page 11
2010-April-27

11 Page







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