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PDF BTS50085-1TMA Data sheet ( Hoja de datos )

Número de pieza BTS50085-1TMA
Descripción Smart High-side High Current Power Switch
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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PROFET® Data Sheet BTS50085-1TMA
Smart Highside High Current Power Switch
Reversave
Product Summary
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
PG-TO220-7-4
Loss of Vbb protection2)
Electrostatic discharge (ESD) protection
Green product (RoHS compliant)
AEC qualified
7
Application
Power switch with current sense diagnostic
1
SMD
feedback for up to 48 V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
70 V
62 V
5.0 ... 58 V
9 m
44 A
90 A
13 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protection functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
V IS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2008-Jan-24

1 page




BTS50085-1TMA pdf
Data Sheet BTS50085-1TMA
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Symbol
Protection Functions16)
Short circuit current limit (Tab to pins 1,2,6,7)
VON = 24 V, time until shutdown max. 300 µs Tc =-40°C:
see page 8 and 13
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC) 17)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
Short circuit shutdown detection voltage 17)
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
IL(SC)
IL(SC)
IL(SC)
td(SC)
VON(CL)
VON(SC)
Tjt
Tjt
Values
Unit
min typ max
-- 90 180 A
-- 90
--
50 80
--
80 -- 350 µs
62 65 72 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
Reverse Battery
Reverse battery voltage 18)
On-state resistance (Pins 1,2,6,7 to pin 4)
Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 k
Integrated resistor in Vbb line
Tj = 25°C:
Tj = 150°C:
Tj = 25C:
Tj =150°C:
-Vbb
RON(rev)
Rbb
-- -- 42 V
-- 8.8 10.5 m
-- 20
90 120 135
105 125 150
16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17) not subject to production test, specified by design.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! To reduce the
power dissipation at the integrated Rbb resistor an input resistor is recommended as described on page 9.
Infineon Technologies AG
Page 5
2008-Jan-24

5 Page





BTS50085-1TMA arduino
Data Sheet BTS50085-1TMA
Options Overview
Type
BTS50085-1TMA
Over temperature protection with hysteresis
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
Over voltage shutdown
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -15 V typ
X
X
X
-
X
X25)
24) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Infineon Technologies AG
Page 11
2008-Jan-24

11 Page







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