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PDF ITS4200S-ME-P Data sheet ( Hoja de datos )
| Número de pieza | ITS4200S-ME-P | |
| Descripción | Smart High-Side NMOS-Power Switch | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ITS4200S-ME-P (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
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ITS4200S-ME-P
Smart High-Side NMOS-Power Switch
Data Sheet
Rev 1.0, 2012-09-01
Standard Power
1 page  
4 General Product Characteristics
ITS4200S-ME-P
General Product Characteristics
4.1 Absolute Maximum Ratings
Table 1
Absolute maximum ratings2) at Tj = 25°C unless otherwise specified. Currents flowing into the
device unless otherwise specified in chapter “Block Diagram and Terms”
Parameter
Symbol
Min.
Values
Typ. Max.
Unit Note /
Number
Test Condit
ion
Supply voltage VS
Voltage
Ground Current IGND
VS
48 V
4.1.1
Reverse Ground Current
Output stage OUT
IGND
- 0.5
A 4.1.2
Output Current; (Short circuit current see
electrical characteristics)
IOUT
-1
self A
limited
4.1.3
Input IN
Voltage
Current
Temperatures
VIN -10
IIN -5
VS V
5 mA
4.1.4
4.1.5
Junction Temperature
Storage Temperature
Power dissipation
Tj -40
Tstg -55
125 °C
125 °C
4.1.6
4.1.7
Ta = 25 °C1)
P tot
Inductive load switch-off energy dissipation
1.4 W
4.1.8
Tj = 125 °C; VS=13.5V; IL= 1.0A2)
ESD Susceptibility
EAS
160 mJ single pulse 4.1.9
ESD susceptibility (input pin)
ESD susceptibility (all other pins)
VESD
VESD
-1
-5
1 kV HBM3)
5 kV HBM3)
4.1.10
4.1.11
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70mm thick) copper area for Vbb connection. PCB
is vertical without blown air
2) Not subject to production test, specified by design
3) ESD susceptibility HBM according to EIA/JESD 22-A 114.
Note: Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” the normal operating range. Protection functions
are neither designed for continuous nor repetitive operation.
Data Sheet
5 Rev 1.0, 2012-09-01
5 Page 
ITS4200S-ME-P
Typical Characterisitics
Standby Current ISSTB versus
Junction Temperature Tj
Typical Performance Graphs
Output Leakage current IOUTLK versus
Junction Temperature Tj
22 4
20
3.5
18
16 3
14 2.5
12
2
10
8 1.5
6
4
2
VIN=0V;Vs=32V
0
−40 −25 0 25 50 75 100 125
Tj [°C]
Initial Peak Short Circuit Current Limt ILSCP versus
Junction Temperature Tj
1
0.5
0
−40 −25
VIN=0V;Vs=32V
0 25 50
Tj [°C]
75 100 125
Initial Short Circuit Shutdown time tSCOFF versus
Junction Temperature Tj
4
3.5
3
2.5
2
1.5
1
0.5
Vs=20V; tm=150μs
0
−40 −25 0 25 50 75 100 125
Tj [°C]
25
Vs=20V
20
15
10
5
0
−40 −25 0 25 50 75 100 125
Tj[°C]
Data Sheet
11 Rev 1.0, 2012-09-01
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet ITS4200S-ME-P.PDF ] | |
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