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PDF IPD068P03L3G Data sheet ( Hoja de datos )
| Número de pieza | IPD068P03L3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOSTM P3 Power-Transistor
Features
• single P-Channel in DPAK
• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
• 100% Avalanche tested
• Pb-free; RoHS compliant, halogen free
• applications: power management
• Halogen-free according to IEC61249-2-21
IPD068P03L3 G
Product Summary
VDS
RDS(on),max
IDD
VGS = 10V
VGS = 4.5V
-30 V
6.8 mW
11.0
-70 A
PG-TO252-3
Type
IPD068P03L3 G
Package
Marking
PG-TO252-3 068P03L
Lead free
Yes
Packing
non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C2)
E AS I D=-70 A, R GS=25 W
V GS
P tot T C=25 °C
T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
-70
-70
-280
149
±20
100
-55 ... 175
tbd
260
55/175/56
Unit
A
mJ
V
W
°C
°C
Rev. 2.1
page 1
2014-05-16
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
70
-10 V
60 -4.5 V
IPD068P03L3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
-3.5 V
25
50
20
40
-3.0 V
-3.2 V
15
-3.2 V
30
-3.5 V
10
20 -3.0 V
-4.5V
10 5 -10 V
-2.7 V
0
012
-VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
70
60
50
40
30
20
10
0
0
150 °C
25 °C
123
-VGS [V]
0
3 0 10 20 30 40 50 60 70
-ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
110
100
90
80
70
60
50
40
30
20
10
0
4 0 10 20 30 40 50 60 70
-ID [A]
Rev. 2.1
page 5
2014-05-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD068P03L3G.PDF ] | |
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