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Número de pieza | IPD042P03L3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD042P03L3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOSTM P3 Power-Transistor
Features
• single P-Channel (Logic Level)
• Enhancement mode
• Qualified according JEDEC1) for target applications
• 175 °C operating temperature
• Pb-free; RoHS compliant
• applications: load switch, HS-switch
• Halogen-free according to IEC61249-2-21
IPD042P03L3 G
Product Summary
VDS
RDS(on),max
ID
VGS = 10V
VGS = 4.5V
-30 V
4.2 mW
6.8
-70 A
D PG-TO252-3
G
S
Type
IPD042P03L3 G
Package
Marking
PG-TO252-3 042P03L
Lead free
Yes
Packing
non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C2)
E AS I D=-70 A, R GS=25 W
V GS
P tot T C =25 °C
T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Value
Unit
-70 A
-70
-280
269 mJ
±20 V
150 W
-55 ... 175
°C
class 2 ( 2 kV - < 4 kV)
260 °C
55/175/56
Rev. 2.2
page 1
2014-05-16
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
70
-10 V
-3.5 V
60 -4.5 V
50
40
30
20
10
0
012
-VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
70
IPD042P03L3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
-3.2 V
-2.7 V
25
20 -3 V
-3 V 15
10
-2.7 V
5
-2.5 V
-2.3 V
3
0
0 10 20
-ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
-3.2 V
-3.5 V
-4.5 V
-10 V
30 40
140
60 120
50 100
40 80
30 60
20
10
0
0
175 °C
25 °C
123
-VGS [V]
4
40
20
0
0 10 20 30 40 50 60 70
-ID [A]
Rev. 2.2
page 5
2014-05-16
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD042P03L3G.PDF ] |
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IPD042P03L3G | Power-Transistor | Infineon Technologies |
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