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PDF K1530 Data sheet ( Hoja de datos )
| Número de pieza | K1530 | |
| Descripción | MOSFET ( Transistor ) - 2SK1530 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
2SK1530
High-Power Amplifier Application
High breakdown voltage
High forward transfer admittance
Complementary to 2SJ201
: VDSS = 200V
: |Yfs| = 5.0 S (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Gate−source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
PD
Tc
Tstg
Rating
200
±20
12
150
150
−55~150
Marking
Unit
V
V
A
W
°C
°C
TOSHIBA
2SK1530
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cut−off current
Gate leakage current
Drain−source breakdown voltage
Drain−source saturation voltage
Gate−source cut−off voltage (Note 2)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
VGS (OFF)
|Yfs|
Ciss
Coss
Crss
VDS = 200 V, VGS = 0
VDS = 0V, VGS = ±20 V
ID = 10 mA, VGS = 0
ID = 8 A, VGS = 10 V
VDS = 10 V, ID = 0.1 A
VDS = 10 V, ID = 5 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDD = 30 V, VGS = 0, f = 1 MHz
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
0: 0.8~1.6
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Y: 1.4~2.8
1
Min Typ. Max Unit
— — 1.0 mA
— — ±0.5 µA
200 —
—
V
— 2.5 5.0
V
0.8 — 2.8
V
— 5.0 —
S
— 900 —
— 180 —
pF
— 100 —
2004-07-06
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K1530.PDF ] | |
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