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PDF K1740 Data sheet ( Hoja de datos )

Número de pieza K1740
Descripción MOSFET ( Transistor ) - 2SK1740
Fabricantes Sanyo 
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No Preview Available ! K1740 Hoja de datos, Descripción, Manual

Ordering number : EN4112A
2SK1740
SANYO Semiconductors
DATA SHEET
2SK1740
N-Channel Junction Silicon FET
HF Amplifiers Low-Frequency Amplifiers
Analog Switches
Features
Adoption of FBET process.
Large yfs.
Small Ciss
Small-sized package permitting 2SK1740-applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
40
--40
10
75
250
150
--55 to +150
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Static Drain-to-Source On-State Resistance
Marking : IJ
V(BR)GDS
IGSS
VGS(off)
IDSS
yfs1
yfs2
Ciss
Crss
NF
RDS(on)
IG=--10µA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, VGS=0V
VDS=10V, ID=10mA, f=1kHz
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, Rg=1k, ID=1mA, f=1kHz
ID=10mA, VGS=0V
* : Pulse Test Pulse Width2ms.
* : The 2SK1740 is classified by IDSS as follows : (unit : mA).
Rank
3
4
5
IDSS
40 to 52
48 to 63
57 to 75
min
--40
Ratings
typ
--2.0 --3.0
40*
10 15
22 30
11
2.5
1.5
30
max
--1.0
--5.0
75*
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Unit
V
V
mA
mA
mW
°C
°C
Unit
V
nA
V
mA
mS
mS
pF
pF
dB
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1806GB SY IM AX-7275 / 62199TH (KT) / N1593TH (KOTO) 8-7275 No.4112-1/5

1 page




K1740 pdf
5
VDG=10V
ID=10mA
Common Gate
4
yrg -- f
3
--grg
2
1 --brg
0
0 200 400 600
Frequency, f -- MHz
Crss -- VDS
2
10
7
5
3
2
2SK1740
7
5
3
2
800 1000
ITR01980
VGS=0V
f=1MHz
10
7
5
3
2
1.0
300
250
200
150
100
Ciss -- VDS
VGS=0V
f=1MHz
23
5 7 10
23
5
Drain-to-Source Voltage, VDS -- V ITR01981
PD -- Ta
1.0
7
5
1.0
23
5 7 10
23
5
Drain-to-Source Voltage, VDS -- V ITR01982
50
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR01983
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of October, 2006. Specifications and information herein are subject
to change without notice.
PS No.4112-5/5

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