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Número de pieza | IPD60N10S4-12 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD60N10S4-12 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOSTM-T2 Power-Transistor
Features
• N-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD60N10S4-12
Product Summary
VDS
RDS(on),max
ID
100 V
12.2 mW
60 A
PG-TO252-3-313
TAB
1
3
Type
IPD60N10S4-12
Package
Marking
PG-TO252-3-313 4N1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=30A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
60
43
240
120
40
±20
94
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30
1 page Preliminary
IPD60N10S4-12
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
240
10 V
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
50
7 V 5 V 5.5 V 6 V
45
40
180
35
30
120 6 V
25
5.5 V
20
60
15
5V
10
7V
10 V
0
012345
5
0
60 120 180
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 60 A; V GS = 10 V
240
-55 °C
25 °C
175 °C
25
22
180
19
240
16
120
13
60
0
345678
VGS [V]
10
7
4
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.0
page 5
2014-06-30
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD60N10S4-12.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD60N10S4-12 | Power-Transistor | Infineon |
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