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PDF IPI80P03P4L-04 Data sheet ( Hoja de datos )

Número de pieza IPI80P03P4L-04
Descripción Power-Transistor
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IPI80P03P4L-04 Hoja de datos, Descripción, Manual

OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
IPB80P03P4L-04
IPI80P03P4L-04, IPP80P03P4L-04
Product Summary
V DS
R DS(on) (SMD Version)
ID
-30 V
4.1 m
-80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80P03P4L-04
IPI80P03P4L-04
IPP80P03P4L-04
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P03L04
4P03L04
4P03L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
-80
-80
-320
410
-80
+5/-16
137
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-07-29

1 page




IPI80P03P4L-04 pdf
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
320
10V 5V
240
160
IPB80P03P4L-04
IPI80P03P4L-04, IPP80P03P4L-04
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
18
4.5V
15
-4V -4.5V
12
4V
9
3.5V 6
-5V
80
-10V
3
3V
0
012345
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
320
-55 °C
25 °C
175 °C
0
60
80 160 240
-I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD
320
6
240 5
160 4
80 3
0
123456
-V GS [V]
2
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2008-07-29

5 Page










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