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PDF IPB180N10S4-02 Data sheet ( Hoja de datos )
| Número de pieza | IPB180N10S4-02 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB180N10S4-02 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOSTM-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB180N10S4-02
Product Summary
VDS
RDS(on)
ID
100 V
2.5 mΩ
180 A
PG-TO263-7-3
Type
IPB180N10S4-02
Package
PG-TO263-7-3
Marking
4N1002
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Conditions
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=90A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
180
171
720
1110
180
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-01-30
1 page  
IPB180N10S4-02
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
720
10 V 7 V
630
540
450
360
270
180
90
0
0123
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
720
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
6
5 V 5.5 V
6.0 V
5.5
6V
5
4.5
5.5 V
4
3.5
3
5V
2.5
2
7V
10 V
1.5
45
1
0 180 360 540 720
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
4.5
630
540
450
360
270
180
90
0
2
175 °C
25 °C
-55 °C
46
VGS [V]
4
3.5
3
2.5
2
1.5
1
8 -60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.0
page 5
2013-01-30
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB180N10S4-02.PDF ] | |
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