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Número de pieza | IPB80P04P4L-08 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB80P04P4L-08 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB80P04P4L-08
IPI80P04P4L-08, IPP80P04P4L-08
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
7.9 mW
-80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70P04P4L-08
IPI70P04P4L-08
IPP70P04P4L-08
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P04L08
4P04L08
4P04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V1)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-40A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-80
-56
-320
24
-80
±162)
75
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-04-27
1 page 5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
320
-10V
240
IPB80P04P4L-08
IPI80P04P4L-08, IPP80P04P4L-08
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
65
-3V
-3.5V
55
-5V
45
160
-4.5V
35
-4V
80
-3.5V
-3V
0
0123456
-V DS [V]
25
15
5
0
-4V
-4.5V
-5V
-10V
20 40 60
-I D [A]
80
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
280
25 °C
-55 °C
175 °C
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -80 A; V GS = -10 V; SMD
10
9
210
8
140
7
70
6
0
2
Rev. 1.0
345
-V GS [V]
5
6 -60 -20 20 60 100 140 180
T j [°C]
page 5
2011-04-27
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB80P04P4L-08.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB80P04P4L-04 | Power-Transistor | Infineon |
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