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PDF IPD90P04P4-05 Data sheet ( Hoja de datos )
| Número de pieza | IPD90P04P4-05 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD90P04P4-05 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD90P04P4-05
Product Summary
V DS
R DS(on)
ID
-40 V
4.7 mΩ
-90 A
PG-TO252-3-313
Type
IPD90P04P4-05
Package
Marking
PG-TO252-3-313 4P0405
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-45A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-90
-90
-360
60
-90
±20
125
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2010-05-26
1 page  
IPD90P04P4-05
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
360
10V 8V
7V
270
180
6V
90
5V
0
01234
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
360
5
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
24 -5V
21 -6V
18
15
12
9
-7V
6 -8V
3 -10V
0
60
90 180
-I D [A]
270
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -90 A; V GS = -10 V
6
270 5
180 4
90
175 °C
3
25 °C
-55 °C
0
2345678
-V GS [V]
2
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-05-26
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD90P04P4-05.PDF ] | |
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