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PDF IPI120P04P4L-03 Data sheet ( Hoja de datos )

Número de pieza IPI120P04P4L-03
Descripción Power-Transistor
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IPI120P04P4L-03 Hoja de datos, Descripción, Manual

OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
Product Summary
V DS
R DS(on) (SMD Version)
ID
-40 V
3.1 mW
-120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120P04P4L-03
IPI120P04P4L-03
IPP120P04P4L-03
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P04L03
4P04L03
4P04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-120
-114
-480
78
-120
±163)
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-02-10

1 page




IPI120P04P4L-03 pdf
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
640
-10 V
560
480
400
320
240
160
80
0
01234
-V DS [V]
IPB120P04P4L-03
IPI120P04P4L-03, IPP120P04P4L-03
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
20
-2.8 V -3 V
-5 V
18
-3.5 V
-4.5 V
16
14
12
-4 V 10
-3.5 V
-3 V
56
8
6
4
2
0
40 80
-I D [A]
-4 V
-4.5 V
-5 V
-10V
120
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
640
560
480
400
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD
25 °C
-55 °C
175 °C
4.5
3.5
320
240
2.5
160
80
0
2
34
-V GS [V]
5
1.5
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2011-02-10

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