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PDF IPB180P04P4-03 Data sheet ( Hoja de datos )
| Número de pieza | IPB180P04P4-03 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB180P04P4-03 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Final Data Sheet
IPB180P04P4-03
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Product Summary
V DS
R DS(on)
ID
-40 V
2.8 mW
-180 A
PG-TO263-7-3
Type
IPB180P04P4-03
Package
PG-TO263-7-3
Marking
4QP0403
Gate
Pin 1
Drain
Pin 4, Tab
Source
Pin 2, 3, 5, 6, 7
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current1)
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
-180
-131
-720
90
-180
±20
150
-55 ... +175
55/175/56
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2011-04-27
1 page  
Final Data Sheet
IPB180P04P4-03
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
720
640
-10V -8V
560
480
400
320
240
160
80
0
01234
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
720
630
540
450
360
270
180
90
175 °C
25 °C -55 °C
0
23456
-V GS [V]
Rev. 1.0
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C; SMD
parameter: V GS
10
-7V
-5V
-5.5V
-6.5V
7
-6V
4 -6V
--66..55VV
-7V
-8V
-10V
56
1
0
80
-I D [A]
160
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -100 A; V GS = -10 V; SMD
3.5
3
2.5
2
1.5
78
1
-60 -20 20 60 100 140 180
T j [°C]
page 5
2011-04-27
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB180P04P4-03.PDF ] | |
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