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PDF IPB180N06S4-H1 Data sheet ( Hoja de datos )
| Número de pieza | IPB180N06S4-H1 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB180N06S4-H1 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra low RDSon
• Ultra high ID
IPB180N06S4-H1
Product Summary
V DS
R DS(on),max
ID
60 V
1.7 mΩ
180 A
PG-TO263-7-3
Type
IPB180N06S4-H1
Package
PG-TO263-7-3
Marking
4N06H1
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=90A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
180
180
720
700
180
±20
250
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2009-03-25
1 page  
IPB180N06S4-H1
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
720
10 V
640
8V 7V
560
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
5
5V
6V
4
480
400 6 V 3
320 7 V
2
240 8 V
160
5V 1
10 V
80
0
0123456
V DS [V]
0
0
160 320 480 640
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
720 2.5
640
-55 °C
25 °C
560
2
480
400
175 °C
1.5
320
240
160 1
80
0 0.5
34567
-60 -20 20
60 100 140 180
V GS [V]
T j [°C]
Rev. 1.0
page 5
2009-03-25
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB180N06S4-H1.PDF ] | |
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