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PDF IPD100N04S4-02 Data sheet ( Hoja de datos )
| Número de pieza | IPD100N04S4-02 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD100N04S4-02 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD100N04S4-02
Product Summary
V DS
R DS(on),max
ID
40 V
2.0 mΩ
100 A
PG-TO252-3-313
Type
IPD100N04S4-02
Package
Marking
PG-TO252-3-313 4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=50A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
100
100
400
440
100
±20
150
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-13
1 page  
IPD100N04S4-02
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
400
10 V
360
7V
320
280
240
200
160
120
80
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
400
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
8
6.5 V
7
5.5 V
6V
6
6V 5
5.5 V
5V
4
3
2
6.5 V
7V
10 V
1
3 4 0 40 80 120 160 200
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
3.5
350
3
300
250
2.5
200
150 2
100
50
0
3
175 °C
25 °C
-55 °C
456
V GS [V]
1.5
7
1
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-04-13
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD100N04S4-02.PDF ] | |
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