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PDF FTU01N60G Data sheet ( Hoja de datos )

Número de pieza FTU01N60G
Descripción 600V N-Channel MOSFET
Fabricantes ark 
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No Preview Available ! FTU01N60G Hoja de datos, Descripción, Manual

600V N-Channel MOSFET
General Features
Low ON Resistance
Low Gate Charge (typical 4.8nC)
Fast Switching
100% Avalanche Tested
RoHS Compliant
Halogen-free available
Applications
High Efficiency SMPS
CFL
Active PFC
Low Power Lamp Ballasts
Low Power Adaptor/Battery Chargers
FTU01N60/FTD01N60
BVDSS
600V
RDS(ON) (Max.)
9.0
ID
1.0A
Ordering Information
Part Number
Package
FTU01N60
TO-251I-PAK
FTU01N60G TO-251I-PAK
FTD01N60
TO-252D-PAK
FTD01N60G TO-252D-PAK
Marking
01N60
01N60G
01N60
01N60G
Remark
RoHS
Halogen-free
RoHS
Halogen-free
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-to-Source Voltage[1]
ID Continuous Drain Current
ID@100
IDM
PD
Continuous Drain Current
Pulsed Drain Current, VGS@10V[2]
Power Dissipation
Derating Factor above 25
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=40mH, ID=1.0A
Peak Diode Recovery dv/dt[3]
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
TJ and TSTG Operating and Storage Temperature Range
TC=25unless otherwise specified
FTU01N60
FTD01N60
Unit
600 V
1.0
Figure 3
A
Figure 6
29 W
0.23 W/
±30 V
20 mJ
4.5 V/ns
300
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
1/11
Rev. 2.1 Jan. 2012

1 page




FTU01N60G pdf
FTU01N60/FTD01N60
Figure 6. Maximum Peak Current Capability
100
Transconductance may limit current in this region
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
tP, Pulse Width(s)
2.5
2
1.5
1
0.5
0
3
Figure 7. Typical Transfer Characteristics
-55
25
150
4567
VGS, Gate-to-Source Voltage,(V)
8
Figure 8. Unclamped Inductive Switching Capability
10
Starting TJ=25
1
Starting TJ=150
0.1
0.01
1.E-06
1.E-05 1.E-04 1.E-03 1.E-02
tAV, Time in Avalanche(s)
1.E-01
Figure 9. Typical Drain-to-Source ON Resistance
10
9.5
9
8.5
VGS=10V
8 VGS=20V
7.5
7
6.5
6
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, Drain Current(A)
Figure 10. Typical Drain-to-Source On Resistance
vs. Junction Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature ()
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m
5/11
Rev. 2.1 Jan. 2012

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