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PDF IPD70N10S3-12 Data sheet ( Hoja de datos )
| Número de pieza | IPD70N10S3-12 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD70N10S3-12
Product Summary
V DS
R DS(on),max
ID
100 V
11.1 mW
70 A
PG-TO252-3-11
Type
IPD70N10S3-12
Package
Marking
PG-TO252-3-11 QN1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
70
48
280
410
70
±20
125
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2011-10-06
1 page  
IPD70N10S3-12
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
280
240
10 V
200
160
120
80
40
0
0123
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
250
200
150
100
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
35
5.5 V
6V
7V
6.5 V
25
6 V 15
5.5V
5V
6.5 V
10 V
7V
45
5
0 20 40 60 80 100 120
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 70 A; V GS = 10 V
-55 °C
25 °C
25
20
175 °C
15
10
50
0
3
Rev. 1.1
456
V GS [V]
5
7
-60 -20 20 60 100 140 180
T j [°C]
page 5
2011-10-06
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD70N10S3-12.PDF ] | |
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