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Número de pieza | IPB70N10S3-12 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB70N10S3-12 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
Product Summary
V DS
R DS(on),max (SMD version)
ID
100 V
11.3 mΩ
70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70N10S3-12
IPI70N10S3-12
IPP70N10S3-12
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N1012
3N1012
3N1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
70
48
280
410
70
±20
125
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-02-12
1 page 5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
400
IPB70N10S3-12
IPI70N10S3-12, IPP70N10S3-12
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
20
360 10 V
18
320
5.5 V
6V
280
16
240
7V
200 14
160
120
80
40
6.5 V
6V
5.5 V
5V
12
10
6.5 V
7V
10 V
0
012345
V DS [V]
8
0 20 40 60 80 100 120
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
250
200
150
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 70 A; V GS = 10 V; SMD
-55 °C
25 °C
21
19
17
15
175 °C
13
100
11
50
0
3
456
V GS [V]
9
7
7
5
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2008-02-12
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB70N10S3-12.PDF ] |
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IPB70N10S3-12 | Power-Transistor | Infineon Technologies |
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