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Número de pieza | IPB70N10SL-16 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB70N10SL-16 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SIPMOS Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
• Green Package
(lead free)
P-TO262-3-1
IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
P-TO263-3-2
Product Summary
VDS 100 V
RDS(on)
16 mΩ
ID 70 A
P-TO220-3-1
2
P-TO220-3-1
23
1
Type
IPP70N10SL-16
IPB70N10SL-16
IPI70N10SL-16
Package
PG-TO220-3-1
PG-TO263-3-2
PG-TO262-3-1
Ordering Code
SP0002-25708
SP0002-25700
SP000225705
Marking
N10L16
N10L16
N10L-16
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Page 1
Value
70
50
280
Unit
A
700 mJ
25
6 kV/µs
±20 V
250 W
-55... +175
55/175/56
°C
2006-02-14
1 page IPI70N10SL-16
IPP70N10SL-16, IPB70N10SL-16
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP70N10L
170 Ptot = 250W
A
l
k
j
ih
g
f
140
e
120
100
80
60
40
VGS [V]
a
b
c
dd
e
f
g
h
ci
j
k
l
b
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
10.0
20
a
0
0
1
2
3
4V
5.5
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP70N10L
80
bc d
mΩ
60
50
40
30
20
10 VGS [V] =
bc def
3.0 3.5 4.0 4.5 5.0
ghi
j
5.5 6.0 6.5 7.0
e
k gil
f
hj
kl
8.0 10.0
0
0 20 40 60 80 100 A 130
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
70
A
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
60
S
60
55
50
45
40
35
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V
5
VGS
50
45
40
35
30
25
20
15
10
5
0
0
10
20
30
40 A
55
ID
Page 5
2006-02-14
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IPB70N10SL-16.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB70N10SL-16 | Power-Transistor | Infineon Technologies |
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