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Número de pieza | IPD250N06N3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD250N06N3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD250N06N3 G
Product Summary
V DS
R DS(on),max
ID
IPD250N06N3 G
60 V
25 mΩ
28 A
Package
Marking
PG-TO252-3
250N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse3)
E AS
Gate source voltage
V GS
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
I D=20 A, R GS=25 Ω
Value
28
20
112
13
±20
Unit
A
mJ
V
Rev.2.0
page 1
2008-11-26
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
100
10 V
80
60
40
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
3
IPD250N06N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
48
5.5 V 6 V
44
7V
8V
8 V 40
36
7V
6.5 V
6V
5.5 V
5V
4.5 V
4
32
28
24
20
16
0
10 V
20 40 60 80 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
40
40
30
20
10
0
0
Rev.2.0
175 °C
25 °C
246
V GS [V]
30
20
10
0
80
page 5
10 20 30 40 50 60
I D [A]
2008-11-26
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD250N06N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD250N06N3G | Power-Transistor | Infineon Technologies |
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