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PDF IPD25N06S4L-30 Data sheet ( Hoja de datos )
| Número de pieza | IPD25N06S4L-30 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD25N06S4L-30 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD25N06S4L-30
Product Summary
VDS
RDS(on),max
ID
60 V
30 mW
25 A
PG-TO252-3-11
Type
IPD25N06S4L-30
Package
Marking
PG-TO252-3-11 4N06L30
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=12.5A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
25
17
92
12
25
±16
29
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2015-10-07
1 page  
IPD25N06S4L-30
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
100
10 V
80
6V
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
100
4 V 4.5 V
5V
90
6V
80
60
40
20
0
01234
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
100
80
60
40
70
5 V 60
4.5 V
50
4V
56
40
30
20
0
10 V
20 40 60 80 100
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 25 A; V GS = 10 V
-55 °C
25 °C
45
40
35
175 °C
30
25
20
20
0
123456
VGS [V]
15
-60 -20 20
60 100 140 180
Tj [°C]
Rev. 1.1
page 5
2015-10-07
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD25N06S4L-30.PDF ] | |
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