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PDF RFP30N06LE Data sheet ( Hoja de datos )

Número de pieza RFP30N06LE
Descripción N-Channel Enhancement-Mode Power MOSFETs
Fabricantes Harris 
Logotipo Harris Logotipo



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RFP30N06LE, RF1S30N06LE,
SEMICONDUCTOR
RF1S30N06LESM
July 1995
30A, 60V, ESD Rated, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
Features
• 30A, 60V
• rDS(ON) = 0.047
• 2kV ESD Protected
Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Description
The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM
are N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Packages
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
F30N06LE
RF1S30N06LE
TO-262AA
1S30N06L
RF1S30N06LESM
TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
Formerly developmental type TA49027.
Symbol
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Copyright © Harris Corporation 1995
5-45
D
G
S
RFP30N06LE, RF1S30N06LE,
RF1S30N06LESM
60
60
+10, -8
UNITS
V
V
V
30
Refer to Peak Current Curve
Refer to UIS Curve
A
96
0.645
2
-55 to +175
260
W
W/oC
kV
oC
oC
File Number 3629.1

1 page




RFP30N06LE pdf
RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Typical Performance Curves (Continued)
100
STARTING TJ = +25oC
STARTING TJ = +150oC
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
+
VDD
-
DUT
IL
0.01
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
0V
RGS
VDD
RL
VDS
DUT
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
tD(ON)
tR
90%
10%
VGS
10%
50%
PULSE WIDTH
tOFF
tD(OFF)
tF
90%
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5-49

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