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Número de pieza | IRFB7446PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFB7446PBF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 96435A
StrongIRFET
IRFB7446PbF
HEXFET® Power MOSFET
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
2.6mΩ
3.3mΩ
c123A
120A
D
G
Gate
DS
G
TO-220AB
IRFB7446PbF
D
Drain
S
Source
Ordering Information
Base part number
IRFB7446PbF
Package Type
TO-220
8
ID = 70A
6
TJ = 125°C
4
2
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com
Standard Pack
Form
Tube
Quantity
50
Complete Part Number
IRFB7446PbF
125
100
75
50
25
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
1
09/11/12
1 page 1000
100
10
TJ = 175°C
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
2.0
50
49 Id = 5.0mA
48
47
46
45
44
43
42
41
40
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
20.0
15.0
10.0
IRFB7446PbF
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
100
1msec
DC
Package Limited
10
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
0.6
VDS= 0V to 32V
0.5
0.4
0.3
0.2
0.1
0.0
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical COSS Stored Energy
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
5.0
www.irf.com
0.0
0
100 200 300 400
ID, Drain Current (A)
500
Fig 13. Typical On-Resistance vs. Drain Current
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFB7446PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFB7446PBF | Power MOSFET ( Transistor ) | International Rectifier |
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