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Número de pieza | 2MBI450U4J-120-50 | |
Descripción | IGBT Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2MBI450U4J-120-50 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! SPECIFICATION
Device Name
Type Name
: IGBT Module
(RoHS compliant product)
: 2MBI450U4J-120-50
Spec. No. : MS5F 6858
May 24 ’07 H.Kaneda
May 24 ’07 S.Miyashita T.Miyasaka
K.Yamada
MS5F6858
1
15
H04-004-07b
1 page 6.Indication on module
Display on the module label
- Logo of production
- Type name : 2MBI450U4J-120-50
- IC, VCES rating 450A 1200V
- Lot No. (5 digits)
- Place of manufacturing (code)
- Bar code
7.Recommend way of mounting on Heat sink
(1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)
(2) Final :Full specified torque (3.5 Nm),sequence(4)→(3)→(2)→(1)
(3) (1)
(2) (4)
Mounting holes
Heat sink
Module
8.Recommend way of PCB mounting on the Module
(1) Initial : 1/3 specified torque, sequence (1)→(2)→(3)→(4)→(5)
(2) Final :Full specified torque (0.6 Nm),sequence(1)→(2)→(3)→(4)→(5)
(4) (2)
(1)
(3) (5)
Mounting holes
PCB (Printed Circuit Board)
Module
M2.4 - M2.6 self tapping screw or M2.5 metrical screw is recommended.
The screw length to be PCB thickness +8mm or less.
Recommended tightening torque is 0.4 to 0.6 N m.
Note: FR4 is suitable as PCB material.
Nickel with a gold flash(Ni+Au) is recommended as surface metallization for spring landing pads.
Tin(Sn) can also be used.
9. Applicable category
This specification is applied to IGBT-Module named 2MBI450U4J-120-50.
MS5F6858
5
15
H04-004-03a
5 Page Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
1200
1000
800
VGE=20V 15V 12V
600
10V
400
200
0
0
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1200
1000
800
Tj=25oC
Tj=125oC
600
400
200
0
01234
Collector-Emitter voltage : VCE [ V ]
5
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25oC
1000.0
100.0
10.0
1.0
Cies
Cres
Coes
0.1
0
10 20
Collector-Emitter voltage : VCE [ V ]
30
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
1200
1000
800
VGE=20V 15V
12V
600
10V
400
200
0
0
8V
1234
Collector-Emitter voltage : VCE [ V ]
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
2
Ic=900A
Ic=450A
Ic=225A
0
5 10 15 20 25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=450A, Tj=25oC
VGE
VCE
0
0 500 1000 1500 2000 2500
Gate charge : Qg [ nC ]
MS5F6858
11
15
H04-004-03a
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet 2MBI450U4J-120-50.PDF ] |
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