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PDF 6MBI300U4-170 Data sheet ( Hoja de datos )

Número de pieza 6MBI300U4-170
Descripción IGBT Module
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! 6MBI300U4-170 Hoja de datos, Descripción, Manual

SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 6MBI300U4-170
Spec. No. :
MS5F 6307
July 15 05 S.Miyashita
July 15 05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6307
1
14
a
H04-004-07b

1 page




6MBI300U4-170 pdf
5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min. typ. max.
Thermal resistance(1device)
Rth(j-c)
IGBT
FWD
- - 0.09
- - 0.15
Contact Thermal resistance
(1device) (*6)
Rth(c-f) with Thermal Compound
- 0.0167 -
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units
°C/W
6.Recommend way of module mounting to Heat sink Clamping
(1) Initial : 1/3 specified torque, sequence (1)(2)(3)(4)(5)(6)(7)(8)
(2) Final Full specified torque (3.5 Nm),sequence(4)(3)(2)(1)(8)(7)(6)(5)
(7) (3) (1) (5)
(6) (2) (4) (8)
Mounting holes
Heat sink
Module
7. Indication on module
Logo of production
Lot.No.
6M BI 300U4-170
300A 1700V
Place of manufacturing (code)
8.Applicable category
This specification is applied to IGBT Module named 6MBI300U4-170 .
9.Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% .
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
MS5F6307
5
14
a
H04-004-03a

5 Page





6MBI300U4-170 arduino
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj= 25°C
10000
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj=125°C
10000
1000
100
ton 1000 toff
toff
tr
tf
100
ton
tr
tf
10
0
100 200 300 400 500
Collector current : Ic [A]
600
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C
10000
1000
100
ton
toff
tr
tf
10
0.1
1.0 10.0
Gate resistance : RG [Ω]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C
300
250
200
150
100
50
0
0.1
Eon
Eoff
Err
1.0 10.0
Gate resistance : RG [Ω]
100.0
10
0
100 200 300 400 500
Collector current : Ic [A]
600
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω
150
Eoff(125°C)
125
100 Err(125°C)
Eoff(25°C)
75
Eon(125°C)
Err(25°C)
50 Eon(25°C)
25
0
0 100 200 300 400 500 600
Collector current : Ic [A]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.5Ω ,Tj <= 125°C
Stray inductance <= 100nH
800
600
400
200
0
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
MS5F6307
11
14
a
H04-004-03a

11 Page







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