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PDF 6MBI100U4B-120-50 Data sheet ( Hoja de datos )

Número de pieza 6MBI100U4B-120-50
Descripción IGBT Module
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! 6MBI100U4B-120-50 Hoja de datos, Descripción, Manual

SPECIFICATION
Device Name
Type Name
: IGBT Module
(RoHS compliant product)
: 6MBI100U4B-120-50
Spec. No. : MS5F 6192
Feb. 02 06 K.Muramatsu
Feb. 02 06 M.W atanabe T.Miyasaka
K.Yamada
MS5F 6192
a
1
14
H04-004-07b

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6MBI100U4B-120-50 pdf
5. Thermal resistance characteristics
It em s
Sym b o l s
Conditions
Characteristics
min. typ. max.
Thermal resistance(1device) Rth(j-c)
IGBT
FWD
- - 0.24
- - 0.39
Contact Thermal resistance
(1 device) (*5)
Rth(c-f)
with Thermal Compound
-
0.05
-
(*5) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units
oC/W
6. Indication on module
Logo of production
Lot.No.
6M BI 100U4B-120-50
100A 1200V
Place of manufacturing (code)
7. Applicable category
This specification is applied to IGBT-Module named 6MBI100U4B-120-50.
8. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% .
Be careful to solderability of the terminals if the module has passed over one
year from manufacturing date, under the above storage condition.
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
Avoid exposure to corrosive gases and dust.
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
RG
V GE
L
V CE
Ic
0V
VGE
VCE
V cc
0V Ic
0A
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
90%
tr r
9 0%
Ir r Ic
10% 10%
tr ( i )
tr
to n
VCE
to f f
0V
9 0%
10%
tf
MS5F 6192
a
5
14
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6MBI100U4B-120-50 arduino
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=5.6Ω, Tj=25oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=5.6Ω, Tj=125oC
10000
1000
100
toff
ton
tr
tf
10
0
50 100 150
Collector current : Ic [ A ]
200
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj=25oC
10000
1000
ton
toff
tr
100
10
1
tf
10 100
Gate resistance : RG [ Ω ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj=125oC
40
Eon
30
20
10
0
1
Eoff
Err
10 100
Gate resistance : RG [ Ω ]
1000
1000
100
ton
toff
tr
tf
10
0
50 100 150
Collector current : Ic [ A ]
200
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=5.6Ω
20
Eon(125oC)
15
Eoff(125oC)
Eon(25oC)
10 Err(125oC)
Eoff(25oC)
5 Err(25oC)
0
0 50 100 150 200
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 5.6Ω, Tj <= 125oC
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F 6192
11 a
14
H04-004-03a

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