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PDF 2MBI150HH-120-50 Data sheet ( Hoja de datos )

Número de pieza 2MBI150HH-120-50
Descripción High Speed IGBT Module
Fabricantes Fuji Electric 
Logotipo Fuji Electric Logotipo



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No Preview Available ! 2MBI150HH-120-50 Hoja de datos, Descripción, Manual

http://www.fujielectric.com/products/semiconductor/
2MBI150HH-120-50
IGBT Modules
HIGH SPEED IGBT MODULE
1200V / 150A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Soft-switching Application
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Symbols
VCES
Conditions
Gate-Emitter voltage
VGES
Ic Continuous
Collector current
Ic pulse
1ms
-Ic
-Ic pulse
Collector Power Dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1) Viso
Screw torque
Mounting (*2)
Terminals (*3)
-
1ms
1 device
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Note *3: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-off time
Forward on voltage
Lead resistance, terminal-chip (*4)
Note *4: Biggest internal terminal resistance among arm.
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
VCE (sat)
(chip)
Cies
toff
tf
VF
(terminal)
VF
(chip)
R lead
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 150mA
Tj=25°C
VGE = 15V
Tj=125°C
IC = 150A
Tj=25°C
Tj=125°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 600V, IC = 150A
VGE = ±15V, RG = 2.1Ω
Ls = 20nH
Tj=25°C
VGE = 0V
Tj=125°C
IF = 50A
Tj=25°C
Tj=125°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Contact Thermal resistance (1 device) (*5)
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Maximum ratings
1200
±20
200
150
400
300
50
100
1390
+150
-40 ~ +125
2500
3.5
4.5
Units
V
V
A
W
°C
VAC
Nm
Characteristics
min. typ. max.
- - 2.0
- - 400
5.7 6.2 6.7
- 3.40 3.70
- 4.20 -
- 3.20 3.50
- 4.00 -
- 12 -
- 0.30 0.60
0.05 0.20
- 1.85 2.30
- 2.00 -
- 1.70 2.15
- 1.85 -
- 1.20 -
Units
mA
nA
V
V
nF
µs
V
Characteristics
min. typ. max.
- - 0.09
- - 0.65
- 0.025 -
Units
°C/W
1

1 page




2MBI150HH-120-50 pdf
2MBI150HH-120-50
Outline Drawings, mm
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
C1
G1
E1
C2E1
G2
E2
E2
5

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