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PDF BC817-40L Data sheet ( Hoja de datos )

Número de pieza BC817-40L
Descripción General Purpose Transistors
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BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 V
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
3
1
2
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
6x M G
G
1
6x = Device Code
x = A, B, or C
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 12
http://oneic.com/
1
Publication Order Number:
BC81716LT1/D

1 page




BC817-40L pdf
BC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L
TYPICAL CHARACTERISTICS BC81725L, SBC81725L
500
150°C
400
300 25°C
200
55°C
100
VCE = 1 V
1
IC/IB = 10
0.1
25°C
150°C
55°C
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
55°C
25°C
0.8 150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
100
http://oneic.com/
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
http://onsemi.com
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